1 - 4 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c4a i dm t c = 25 c, pulse width limited by t jm 16 a i ar t c = 25 c4a e ar t c = 25 c 20mj e as 700 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 150 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 2 g n-channel enhancement mode avalanche rated, low q g , high dv/dt features ? ixys advanced low q g process low gate charge and capacitances - easier to drive - faster switching international standard packages low r ds (on) rated for unclamped inductive load switching (uis) molding epoxies meet ul 94 v-0 flammability classification advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 1000 v v gs(th) v ds = v gs , i d = 1.5 ma 3.0 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c50 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 3.0 pulse test, t 300 s, duty cycle d 2 % hiperfet tm power mosfets q-class v dss =1000 v i d25 =4a r ds(on) = 3.0 t rr 250 ns preliminary data sheet g s to-263 (ixfa) g d s to-220 (ixfp) g = gate d = drain s = source tab = drain ixfa 4n100q ixfp 4n100q d (tab) d (tab) 98705 (02/04/00) ixys reserves the right to change limits, test conditions, and dimensions.
2 - 4 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 1.5 2.5 s c iss 1050 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 120 pf c rss 30 pf t d(on) 17 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 15 ns t d(off) r g = 4.7 (external), 32 ns t f 18 ns q g(on) 39 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 9nc q gd 22 nc r thjc 0.8 k/w r thck (to-220) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 4 a i sm repetitive; pulse width limited by t jm 16 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = i s , -di/dt = 100 a/ s, v r = 100 v 0.52 c i rm 1.8 a to-263 aa (ixfa) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-220 ab (ixfp) outline dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 ixfa 4n100q ixfp 4n100q ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4 ? 2000 ixys all rights reserved ixfa 4n100q ixfp 4n100q v ds - volts 0246810 i d - amperes 0 1 2 3 4 v ds - volts 0 5 10 15 20 i d - amperes 0 1 2 3 4 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v gs - volts 345678 i d - amperes 0 1 2 3 4 i d - amperes 0123456 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts 0 4 8 12 16 20 i d - amperes 0 1 2 3 4 5 6 7v 6v v gs = 10v v gs = 10v 9v 8v t j = 25 c v gs = 10v 9v 8v t j = 25 c t j = 125 c 5v 5v t j = 25 c t j = 125 c 6v 7v 5v 6v 7v v gs = 10v 9v 8v t j = 125 o c v gs = 10v i d = 2a t j = 25 o c figure 1. output characteristics at 25 o c figure 2. extended output characteristics at 125 o c figure 3. output characteristics at 125 c figure 6. r ds(on) normalized to 0.5 i d25 value vs. t j figure 5. r ds(on) normalized to 0.5 i d25 value vs. i d figure 4. admittance curves
4 - 4 ? 2000 ixys all rights reserved ixfa 4n100q ixfp 4n100q t c - degrees centigrade -50 -25 0 25 50 75 100 125 150 i d - amperes 0 1 2 3 4 5 pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.01 0.10 1.00 v ds - volts 0 5 10 15 20 25 30 35 capacitance - pf 10 100 1000 v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 i d - amperes 0 2 4 6 8 10 gate charge - nc 0 102030405060 v gs - volts 0 3 6 9 12 15 crss coss ciss v ds = 600 v i d = 3 a i g = 10 ma f = 1mhz t j = 125 o c t j = 25 o c 60 2000 figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure10. drain current vs. case temperature figure 11. transient thermal resistance
|
